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Model BSS138PW,115

Description Nexperia Si N沟道 MOSFET BSS138PW,115, 320 mA, Vds=60 V, 3引脚 SOT-323 (SC-70)封装

Brand: Nexperia

Packaging SOT-323-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.9 Ω
Technical parameters/dissipated power:	0.31 W
Technical parameters/threshold voltage:	1.2 V
Technical parameters/Input capacitance:	38 pF
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/rise time:	3 ns
Technical parameters/Input capacitance (Ciss):	50pF @10V(Vds)
Technical parameters/rated power (Max):	260 mW
Technical parameters/descent time:	4 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	260mW (Ta), 830mW (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-323-3
Dimensions/Length:	2.2 mm
Dimensions/Width:	1.35 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-323-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TA)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Industrial, audio, power management, automotive use
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	lead-free

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