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Model BSS84P H6327
Description INFINEON BSS84P H6327 晶体管, MOSFET, P沟道, -170 mA, -60 V, 8 ohm, -10 V, -1.5 V
Product QR code
Brand: Infineon
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.21  yuan 0.21yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5096) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

8 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

360 mW

 

Technical parameters/threshold voltage:

1.5 V

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/rise time:

16.2 ns

 

Technical parameters/Input capacitance (Ciss):

19pF @25V(Vds)

 

Technical parameters/rated power (Max):

360 mW

 

Technical parameters/descent time:

20.5 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

360mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Length:

2.9 mm

 

Dimensions/Width:

1.3 mm

 

Dimensions/Height:

1.10 mm

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Automotive, Portable Devices, Power Management, Consumer Electronics

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

Customs information/ECCN code:

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NDS0605 NDS0605 Fairchild 功能相似 SOT-23-3
FAIRCHILD SEMICONDUCTOR NDS0605 晶体管, MOSFET, P沟道, 180 mA, -60 V, 5 ohm, -10 V, -1.7 V
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