Technical parameters/rated power: | 2.5 W |
|
Technical parameters/number of channels: | 2 |
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Technical parameters/drain source resistance: | 75 mΩ |
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Technical parameters/polarity: | N+P |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30 V |
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Technical parameters/Continuous drain current (Ids): | 4.8A/4.3A |
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Technical parameters/Input capacitance (Ciss): | 520pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2.5 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 1.75 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7379QPBF
|
International Rectifier | 类似代替 |
SOIC N+P 30V 5.8A/4.3A
|
|||
|
|
Infineon | 类似代替 | SOIC-8 |
SOIC N+P 30V 5.8A/4.3A
|
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