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Specification parameters
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Technical parameters/number of channels:

Technical parameters/number of pins:

Technical parameters/drain source resistance:

3.3 Ω

Technical parameters/polarity:

N-Channel

Technical parameters/dissipated power:

45 W

Technical parameters/threshold voltage:

3.75 V

Technical parameters/drain source voltage (Vds):

600 V

Technical parameters/Continuous drain current (Ids):

2.40 A

Technical parameters/rise time:

14 ns

Technical parameters/Input capacitance (Ciss):

311pF @25V(Vds)

Technical parameters/rated power (Max):

45 W

Technical parameters/descent time:

14 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

45W (Tc)

Encapsulation parameters/installation method:

Through Hole

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-251-3

Dimensions/Length:

6.6 mm

Dimensions/Width:

2.4 mm

Dimensions/Height:

6.2 mm

Dimensions/Packaging:

TO-251-3

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tube

Other/Manufacturing Applications:

Power Management, Industrial, Power Management, Lighting, Industrial, Power management, lighting, lighting, industrial

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with the REACH SVHC

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	STD3NK60ZT4	ST Microelectronics	完全替代	TO-252-3	STMICROELECTRONICS STD3NK60ZT4 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V	PDF
	STW20NK50Z	ST Microelectronics	功能相似	TO-247-3	N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643