Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.025 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1 W |
|
Technical parameters/threshold voltage: | 300 mV |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/rise time: | 30 ns |
|
Technical parameters/Input capacitance (Ciss): | 680pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 1 W |
|
Technical parameters/descent time: | 60 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 2.9 mm |
|
Dimensions/Width: | 1.6 mm |
|
Dimensions/Height: | 0.8 mm |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002ET1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR 2N7002ET1G 晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
|
||
BSS123-7-F
|
Diodes | 功能相似 | SOT-23-3 |
三极管
|
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