Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.07 Ω |
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Technical parameters/dissipated power: | 1.25 W |
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Technical parameters/threshold voltage: | 650 mV |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/rise time: | 12 ns |
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Technical parameters/Input capacitance (Ciss): | 200pF @10V(Vds) |
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Technical parameters/descent time: | 3 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.25 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSTR4501NT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
SOT-23 N-CH 20V 3.2A
|
||
NTR4501NT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR NTR4501NT1G 晶体管, MOSFET, N沟道, 3.2 A, 20 V, 80 mohm, 4.5 V, 1.2 V
|
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