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Model NTS4409NT1G
Description ON SEMICONDUCTOR NTS4409NT1G 场效应管, MOSFET, N沟道, 25V, 750mA, SOT-323
Product QR code
Brand: ON Semiconductor
Packaging SC-70-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.76  yuan 0.76yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4021) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

25.0 V

 

Technical parameters/rated current:

700 mA

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.35 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

330 mW

 

Technical parameters/threshold voltage:

650 mV

 

Technical parameters/Input capacitance:

60.0 pF

 

Technical parameters/gate charge:

1.50 nC

 

Technical parameters/drain source voltage (Vds):

25 V

 

Technical parameters/Leakage source breakdown voltage:

25.0 V

 

Technical parameters/breakdown voltage of gate source:

±8.00 V

 

Technical parameters/Continuous drain current (Ids):

750 mA

 

Technical parameters/rise time:

8.2 ns

 

Technical parameters/Input capacitance (Ciss):

60pF @10V(Vds)

 

Technical parameters/rated power (Max):

280 mW

 

Technical parameters/descent time:

41 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

330 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SC-70-3

 

Dimensions/Length:

2.2 mm

 

Dimensions/Width:

1.35 mm

 

Dimensions/Height:

0.9 mm

 

Dimensions/Packaging:

SC-70-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/P

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