Technical parameters/rated power: | 298 W |
|
Technical parameters/number of channels: | 1 |
|
Technical parameters/polarity: | P-CH |
|
Technical parameters/dissipated power: | 298 W |
|
Technical parameters/threshold voltage: | 2 V |
|
Technical parameters/drain source voltage (Vds): | 85 V |
|
Technical parameters/Continuous drain current (Ids): | 96A |
|
Technical parameters/rise time: | 34 ns |
|
Technical parameters/Input capacitance (Ciss): | 13100pF @25V(Vds) |
|
Technical parameters/descent time: | 22 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 298W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Width: | 9.65 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA96P085TTRL
|
IXYS Semiconductor | 类似代替 | TO-263-3 |
MOSFET P-CH 85V 96A TO-263
|
||
IXTH96P085T
|
IXYS Semiconductor | 完全替代 | TO-247-3 |
TO-247P-CH 85V 96A
|
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