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Model IXFN100N50P
Description IXYS SEMICONDUCTOR IXFN100N50P 晶体管, MOSFET, 极性FET, N沟道, 100 A, 500 V, 49 mohm, 10 V, 5 V
Product QR code
Brand: IXYS Semiconductor
Packaging SOT-227-4
Delivery time
Packaging method Tube
Standard packaging quantity 1
3.25  yuan 3.25yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9026) Minimum order quantity(1)
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Technical parameters/rated power:

1.04 kW

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

4

 

Technical parameters/drain source resistance:

0.049 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

1.04 kW

 

Technical parameters/threshold voltage:

5 V

 

Technical parameters/drain source voltage (Vds):

500 V

 

Technical parameters/Leakage source breakdown voltage:

500 V

 

Technical parameters/Continuous drain current (Ids):

100 A

 

Technical parameters/rise time:

29 ns

 

Technical parameters/Input capacitance (Ciss):

20000pF @25V(Vds)

 

Technical parameters/rated power (Max):

1040 W

 

Technical parameters/descent time:

26 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

1040W (Tc)

 

Encapsulation parameters/installation method:

Chassis

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SOT-227-4

 

Dimensions/Length:

38.23 mm

 

Dimensions/Width:

25.42 mm

 

Dimensions/Height:

9.6 mm

 

Dimensions/Packaging:

SOT-227-4

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Power Management, Lighting, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VMO80-05P1 VMO80-05P1 IXYS Semiconductor 功能相似 ECO-PAC2
Mosfet n-Ch Eco-Pac2

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