Technical parameters/drain source resistance: | 15.8 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 71 W |
|
Technical parameters/product series: | IRFR3806 |
|
Technical parameters/threshold voltage: | 4 V |
|
Technical parameters/Input capacitance: | 1150pF @50V |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Leakage source breakdown voltage: | 60 V |
|
Technical parameters/Continuous drain current (Ids): | 43.0 A |
|
Technical parameters/Input capacitance (Ciss): | 1150pF @50V(Vds) |
|
Technical parameters/rated power (Max): | 71 W |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Length: | 6.73 mm |
|
Dimensions/Height: | 2.39 mm |
|
Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Rail, Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD70N6F3
|
ST Microelectronics | 功能相似 | TO-252-3 |
STD70N6F3 系列 60 V 10.5 mOhm N 沟道 STripFET™ III 功率 MOSFET - TO-252
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review