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Model IPD60R385CP
Description INFINEON IPD60R385CP 功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
Product QR code
Brand: Infineon
Packaging TO-252
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
9.55  yuan 9.55yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5132) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

600 V

 

Technical parameters/rated current:

9.00 A

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.35 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

83 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/Input capacitance:

790 pF

 

Technical parameters/gate charge:

22.0 nC

 

Technical parameters/drain source voltage (Vds):

650 V

 

Technical parameters/Continuous drain current (Ids):

9.00 A

 

Technical parameters/rise time:

5 ns

 

Technical parameters/Input capacitance (Ciss):

790pF @100V(Vds)

 

Technical parameters/rated power (Max):

83 W

 

Technical parameters/descent time:

5 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

83 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252

 

Dimensions/Length:

6.73 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.41 mm

 

Dimensions/Packaging:

TO-252

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Not Recommended

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standar

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