Technical parameters/power supply voltage (DC): | 4.50V (min) |
|
Technical parameters/operating voltage: | 4.5V ~ 5.5V |
|
Technical parameters/load capacitance: | 10.0 pF |
|
Technical parameters/access time: | 150 ns |
|
Technical parameters/memory capacity: | 8000 B |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 28 |
|
Encapsulation parameters/Encapsulation: | DIP |
|
Dimensions/Packaging: | DIP |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Dallas Semiconductor | 完全替代 | 720 EMOD |
MAXIM INTEGRATED PRODUCTS DS1225Y-150+ 芯片, 存储器, NVRAM, CMOS 64K, 1225, DIP28 新
|
||
DS1225Y-150IND
|
Maxim Integrated | 类似代替 | EDIP-28 |
64K Nonvolatile SRAM
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review