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Model DMN26D0UT-7

Description DMN26D0UT 系列 20 V 3 Ohm 表面贴装 N 沟道增强模式 Mosfet - SOT-523

Brand: Diodes

Packaging SOT-523-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	1.8 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	300 mW
Technical parameters/threshold voltage:	1 V
Technical parameters/Input capacitance:	14.1 pF
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Leakage source breakdown voltage:	20 V
Technical parameters/Continuous drain current (Ids):	0.23A
Technical parameters/rise time:	7.9 ns
Technical parameters/Input capacitance (Ciss):	14.1pF @15V(Vds)
Technical parameters/rated power (Max):	300 mW
Technical parameters/descent time:	15.2 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	300 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-523-3
Dimensions/Packaging:	SOT-523-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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