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Model CSD87502Q2T

Description TEXAS INSTRUMENTS CSD87502Q2T 双路场效应管, MOSFET, 双N沟道, 5 A, 30 V, 0.027 ohm, 10 V, 1.6 V

Brand: TI

Packaging WSON-FET-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	6
Technical parameters/drain source resistance:	0.027 Ω
Technical parameters/polarity:	Dual N-Channel
Technical parameters/dissipated power:	2.3 W
Technical parameters/threshold voltage:	1.6 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	5A
Technical parameters/rise time:	11 ns
Technical parameters/Input capacitance (Ciss):	353pF @15V(Vds)
Technical parameters/rated power (Max):	2.3 W
Technical parameters/descent time:	3 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2300 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	WSON-FET-6
Dimensions/Length:	2 mm
Dimensions/Width:	2 mm
Dimensions/Height:	0.75 mm
Dimensions/Packaging:	WSON-FET-6
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99