Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.0039 Ω |
|
Technical parameters/polarity: | Dual N-Channel |
|
Technical parameters/dissipated power: | 12 W |
|
Technical parameters/threshold voltage: | 1.9 V |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Input capacitance (Ciss): | 1860pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 12 W |
|
Technical parameters/operating temperature (Max): | 125 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 12000 mW |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | LSON-CLIP |
|
Dimensions/Packaging: | LSON-CLIP |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Supply in progress |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Contains Lead |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD86350Q5D
|
TI | 功能相似 | LSON-CLIP-8 |
同步降压 NexFET™ 电源块 MOSFET 对
|
||
CSD86360Q5D
|
TI | 功能相似 | LSON-CLIP-8 |
同步降压 NexFET™ 电源块
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review