Chip AI consultant
Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 0.0024 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 216 W |
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Technical parameters/threshold voltage: | 1.8 V |
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Technical parameters/drain source voltage (Vds): | 40 V |
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Technical parameters/Leakage source breakdown voltage: | 40 V |
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Technical parameters/Continuous drain current (Ids): | 100A |
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Technical parameters/rise time: | 7.3 ns |
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Technical parameters/Input capacitance (Ciss): | 4680pF @20V(Vds) |
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Technical parameters/rated power (Max): | 216 W |
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Technical parameters/descent time: | 9.3 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 259W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.67 mm |
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Dimensions/Width: | 4.7 mm |
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Dimensions/Height: | 16.51 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Supply in progress |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK753R1-40E
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NXP | 功能相似 | TO-220 |
NXP BUK753R1-40E 晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0026 ohm, 10 V, 3 V
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