Chip AI consultant
Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 0.0031 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3.1 W |
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Technical parameters/threshold voltage: | 1.6 V |
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Technical parameters/drain source voltage (Vds): | 25 V |
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Technical parameters/Leakage source breakdown voltage: | 25 V |
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Technical parameters/Continuous drain current (Ids): | 100 A |
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Technical parameters/rise time: | 15.9 ns |
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Technical parameters/Input capacitance (Ciss): | 1780pF @12.5V(Vds) |
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Technical parameters/rated power (Max): | 3.1 W |
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Technical parameters/descent time: | 5.7 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3.1W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | PowerTDFN-8 |
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Dimensions/Length: | 5.8 mm |
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Dimensions/Width: | 4.9 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | PowerTDFN-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Supply in progress |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSC030N03LSGATMA1
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Infineon | 功能相似 | PG-TDSON-8 |
INFINEON BSC030N03LSGATMA1 晶体管, MOSFET, N沟道, 100 A, 30 V, 2.5 mohm, 10 V, 1 V
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