Technical parameters/frequency: | 100 MHz |
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Technical parameters/rated voltage (DC): | 65.0 V |
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Technical parameters/rated current: | 100 mA |
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Technical parameters/rated power: | 0.265 W |
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Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 265 mW |
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Technical parameters/breakdown voltage (collector emitter): | 65 V |
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Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 200 @2mA, 5V |
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Technical parameters/rated power (Max): | 265 mW |
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Technical parameters/DC current gain (hFE): | 200 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -50 ℃ |
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Technical parameters/dissipated power (Max): | 265 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-723-3 |
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Dimensions/Length: | 1.25 mm |
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Dimensions/Width: | 0.85 mm |
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Dimensions/Height: | 0.55 mm |
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Dimensions/Packaging: | SOT-723-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Industrial, Power Management, Power Management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SBC846BLT1G
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ON Semiconductor | 功能相似 | SOT-23-3 |
On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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SBC846BLT3G
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ON Semiconductor | 功能相似 | SOT-23-3 |
小信号 NPN 晶体管，ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
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