Technical parameters/frequency: | 250 MHz |
|
Technical parameters/rated voltage (DC): | 45.0 V |
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Technical parameters/rated current: | 100 mA |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 330 mW |
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Technical parameters/breakdown voltage (collector emitter): | 45 V |
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Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 480 @10µA, 5V |
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Technical parameters/rated power (Max): | 330 mW |
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Technical parameters/dissipated power (Max): | 330 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | End of Life |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847ALT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
BC847CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847CLT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
|
|
Leshan Radio | 功能相似 |
NPN 晶体管,ON Semiconductor 这些 ON Semiconductor 双极晶体管可放大模拟或数字信号。 它们还可切换直流或用作振荡器。 ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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