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Model 2SK3018T106

Description ROHM 2SK3018T106 晶体管, MOSFET, N沟道, 100 mA, 30 V, 8 ohm, 4 V, 1.5 V

Brand: ROHM Semiconductor

Packaging SOT-323

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	30.0 V
Technical parameters/rated current:	100 mA
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	8 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	200 mW
Technical parameters/threshold voltage:	1.5 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Leakage source breakdown voltage:	30.0 V
Technical parameters/Continuous drain current (Ids):	100 mA
Technical parameters/rise time:	35 ns
Technical parameters/Input capacitance (Ciss):	13pF @5V(Vds)
Technical parameters/rated power (Max):	200 mW
Technical parameters/descent time:	80 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/dissipated power (Max):	200mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-323
Dimensions/Packaging:	SOT-323
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Not For New Designs
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Industrial, Portable Devices, Power Management, Power Management,
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Customs information/ECCN code:	EAR99

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	RSR025N03TL	TY Semiconductor	类似代替		ROHM RSR025N03TL 晶体管, MOSFET, N沟道, 2.5 A, 30 V, 70 mohm, 10 V, 2.5 V	PDF
	RSR025N03TL	ROHM Semiconductor	类似代替	SOT-23-3	ROHM RSR025N03TL 晶体管, MOSFET, N沟道, 2.5 A, 30 V, 70 mohm, 10 V, 2.5 V	PDF