Technical parameters/rated power: | 1.6 W |
|
Technical parameters/drain source resistance: | 1.50 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1.60 W |
|
Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 730 mA |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SOT-89-3 |
|
Dimensions/Packaging: | SOT-89-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
Customs information/HTS code: | 8541900000 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TN2510N8
|
Microchip | 完全替代 |
Trans MOSFET N-CH 100V 0.73A 4Pin(3+Tab) SOT-89
|
|||
TN2510N8
|
Supertex | 完全替代 | SOT-89 |
Trans MOSFET N-CH 100V 0.73A 4Pin(3+Tab) SOT-89
|
||
VN2450N8-G
|
Microchip | 类似代替 | SOT-89-3 |
Trans MOSFET N-CH 500V 0.25A 4Pin(3+Tab) SOT-89
|
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