Technical parameters/power supply voltage (DC): | 3.00V (min) |
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Technical parameters/output current: | 20 mA |
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Technical parameters/power supply current: | 0.04 mA |
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Technical parameters/number of circuits: | 1 |
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Technical parameters/number of channels: | 2 |
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Technical parameters/dissipated power: | 725 W |
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Technical parameters/Common Mode Rejection Ratio: | 84 dB |
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Technical parameters/input compensation voltage: | 5 mV |
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Technical parameters/input bias current: | 0.005 nA |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 725 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 125℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TLC3702MDG4
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TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS TLC3702MDG4 模拟比较器, 双路, 微功率, 2, 1.1 µs, 4V 至 16V, SOIC, 8 引脚
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TLC393QDRQ1
|
TI | 类似代替 | SOIC-8 |
TLC 系列 LinCMOS 比较器 ### 比较器,Texas Instruments Texas Instruments 系列电压比较器不仅包括传统单、双和四路比较器封装,还包括窗口比较器及过压和欠压监控器。 尽管比较器和运算放大器表面上是相似的设备,但它们在实用应用中的操作大大不同。 运算放大器适用于线性操作,附带适当反馈,而比较器定制用于快速切换且通常在开路模式中操作。 专用电压比较器具有明显较短的传播延迟,且可在饱和条件下具有更快的响应时间。 大多数比较器还更耐受高差分输入电压,且很多比较器具有开路集电极输出,从而可与其他设备并联操作。
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