Technical parameters/power supply current: | 7.8 mA |
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Technical parameters/number of circuits: | 1 |
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Technical parameters/number of channels: | 1 |
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Technical parameters/dissipated power: | 740 mW |
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Technical parameters/Common Mode Rejection Ratio: | 85dB ~ 100dB |
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Technical parameters/input compensation drift: | 0.00 V/K |
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Technical parameters/bandwidth: | 270 MHz |
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Technical parameters/conversion rate: | 400 V/μs |
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Technical parameters/gain bandwidth product: | 270 MHz |
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Technical parameters/input compensation voltage: | 2 mV |
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Technical parameters/input bias current: | 2.6 µA |
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Technical parameters/available channels: | S |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | 40 ℃ |
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Technical parameters/3dB bandwidth: | 270 MHz |
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Technical parameters/gain bandwidth: | 270 MHz |
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Technical parameters/dissipated power (Max): | 740 mW |
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Technical parameters/Common Mode Rejection Ratio (Min): | 85 dB |
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Technical parameters/power supply voltage (Max): | 32 V |
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Technical parameters/power supply voltage (Min): | 5 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.91 mm |
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Dimensions/Height: | 1.58 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | 0℃ ~ 70℃ |
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Other/Product Lifecycle: | Active |
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