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Model STW11NK90Z

Description STMICROELECTRONICS STW11NK90Z 功率场效应管, MOSFET, N沟道, 9.2 A, 900 V, 0.82 ohm, 10 V, 3.75 V

Brand: ST Microelectronics

Packaging TO-247-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.82 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	200 W
Technical parameters/threshold voltage:	3.75 V
Technical parameters/drain source voltage (Vds):	900 V
Technical parameters/Continuous drain current (Ids):	9.2A
Technical parameters/rise time:	19 ns
Technical parameters/Input capacitance (Ciss):	3000pF @25V(Vds)
Technical parameters/rated power (Max):	200 W
Technical parameters/descent time:	50 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	200W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-247-3
Dimensions/Length:	15.75 mm
Dimensions/Width:	5.15 mm
Dimensions/Height:	20.15 mm
Dimensions/Packaging:	TO-247-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Power Management, Industrial, Power Management, Industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

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	2SK3878(F)	Toshiba	功能相似	TO-3	TOSHIBA 2SK3878(F) 功率场效应管, MOSFET, N沟道, 9 A, 900 V, 1.3 ohm, 10 V, 4 V	PDF
	STW12NK95Z	ST Microelectronics	类似代替	TO-247-3	STMICROELECTRONICS STW12NK95Z 功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.69 ohm, 10 V, 3.75 V	PDF