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Model STF10N65K3

Description STMICROELECTRONICS STF10N65K3 功率场效应管, MOSFET, N沟道, 10 A, 650 V, 1 ohm, 10 V, 3 V

Brand: ST Microelectronics

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	1 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	35 W
Technical parameters/threshold voltage:	3 V
Technical parameters/drain source voltage (Vds):	650 V
Technical parameters/Continuous drain current (Ids):	10A
Technical parameters/rise time:	14 ns
Technical parameters/Input capacitance (Ciss):	1180pF @25V(Vds)
Technical parameters/rated power (Max):	35 W
Technical parameters/descent time:	35 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	35W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	STF5N95K3	ST Microelectronics	类似代替	TO-220-3	N 通道 MDmesh™ K3 系列，SuperMESH3™, STMicroelectronics ### MOSFET 晶体管，STMicroelectronics	PDF