Technical parameters/number of channels: | 1 |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.16 Ω |
|
Technical parameters/dissipated power: | 30 W |
|
Technical parameters/threshold voltage: | 4 V |
|
Technical parameters/Input capacitance: | 1434 pF |
|
Technical parameters/drain source voltage (Vds): | 650 V |
|
Technical parameters/rise time: | 7.5 ns |
|
Technical parameters/forward voltage (Max): | 1.5 V |
|
Technical parameters/Input capacitance (Ciss): | 1345pF @100V(Vds) |
|
Technical parameters/rated power (Max): | 30 W |
|
Technical parameters/descent time: | 7.5 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/operating temperature: | 150 ℃ |
|
Technical parameters/dissipated power (Max): | 30W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Length: | 10.4 mm |
|
Dimensions/Width: | 4.6 mm |
|
Dimensions/Height: | 16.4 mm |
|
Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STI20N65M5
|
ST Microelectronics | 功能相似 | TO-262-3 |
650V,0.16Ω,18A,N沟道功率MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review