Technical parameters/dissipated power: | 1.3W (Ta) |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Input capacitance (Ciss): | 870pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 1.3W (Ta) |
|
Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DIP-4 |
|
Dimensions/Packaging: | DIP-4 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLD024
|
IRF | 完全替代 |
MOSFET N-CH 60V 2.5A 4-DIP
|
|||
IRLD024
|
VISHAY | 完全替代 | DIP-4 |
MOSFET N-CH 60V 2.5A 4-DIP
|
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