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Model IRFZ24NPBF
Description N 通道功率 MOSFET 13A 至 19A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0.75  yuan 0.75yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1022) Minimum order quantity(1)
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Technical parameters/rated power:

45 W

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.07 Ω

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

45 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/Input capacitance:

370 pF

 

Technical parameters/drain source voltage (Vds):

55 V

 

Technical parameters/Leakage source breakdown voltage:

55 V

 

Technical parameters/Continuous drain current (Ids):

17A

 

Technical parameters/rise time:

34 ns

 

Technical parameters/Input capacitance (Ciss):

370pF @25V(Vds)

 

Technical parameters/rated power (Max):

45 W

 

Technical parameters/descent time:

27 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

45W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10 mm

 

Dimensions/Width:

4.4 mm

 

Dimensions/Height:

8.77 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Consumer Full-Bridg

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF9Z34NPBF IRF9Z34NPBF IFA 类似代替
P 通道功率 MOSFET 超过 8A，Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
PDF
IRFZ44ZPBF IRFZ44ZPBF Infineon 类似代替 TO-220-3
INFINEON IRFZ44ZPBF 晶体管, MOSFET, 汽车, N沟道, 51 A, 55 V, 13.9 mohm, 10 V, 4 V
PDF
IRLZ24NPBF IRLZ24NPBF International Rectifier 类似代替 TO-220-3
INFINEON IRLZ24NPBF 晶体管, MOSFET, N沟道, 18 A, 55 V, 60 mohm, 10 V, 2 V
PDF
IRLZ24NPBF IRLZ24NPBF IFC 类似代替
INFINEON IRLZ24NPBF 晶体管, MOSFET, N沟道, 18 A, 55 V, 60 mohm, 10 V, 2 V
IRLZ24NPBF IRLZ24NPBF Infineon 类似代替 TO-220-3
INFINEON IRLZ24NPBF 晶体管, MOSFET, N沟道, 18 A, 55 V, 60 mohm, 10 V, 2 V
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