Technical parameters/rated voltage (DC): | 500 V |
|
Technical parameters/rated current: | 32.0 A |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Continuous drain current (Ids): | 32.0 A |
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Technical parameters/rise time: | 120 ns |
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Encapsulation parameters/installation method: | Through Hole |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP32N50KPBF
|
Vishay Semiconductor | 功能相似 | TO-247 |
Power Field-Effect Transistor, 32A I(D), 500V, 0.16Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
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