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Model MJD117-001
Description 互补达林顿功率晶体管 Complementary Darlington Power Transistors
Product QR code
Brand: ON Semiconductor
Packaging TO-251-3
Delivery time
Packaging method Rail
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2948) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-100 V

 

Technical parameters/rated current:

-2.00 A

 

Technical parameters/polarity:

PNP

 

Technical parameters/dissipated power:

1750 mW

 

Technical parameters/breakdown voltage (collector emitter):

100 V

 

Technical parameters/Maximum allowable collector current:

2A

 

Technical parameters/minimum current amplification factor (hFE):

1000 @2A, 3V

 

Technical parameters/rated power (Max):

1.75 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/gain bandwidth:

25MHz (Min)

 

Technical parameters/dissipated power (Max):

1750 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-251-3

 

Dimensions/Height:

6.35 mm

 

Dimensions/Packaging:

TO-251-3

 

Physical parameters/operating temperature:

-65℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Rail

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
KSH117ITU KSH117ITU Fairchild 类似代替 TO-251-3
Trans Darlington PNP 100V 2A 3Pin(3+Tab) IPAK Tube
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