Technical parameters/frequency: | 40000 MHz |
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Technical parameters/power supply voltage (DC): | 5.00V (max) |
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Technical parameters/number of channels: | 1 |
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Technical parameters/gain: | 17 dB |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/power supply voltage (Max): | 5 V |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | Die |
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Dimensions/Packaging: | Die |
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Physical parameters/operating temperature: | -55℃ ~ 85℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Other/Manufacturing Applications: | Missiles and Precision Munitions, Aerospace and Defense |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | 3A001B2D |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HMC1040LP3CE
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ADI | 功能相似 | QFN-16 |
Analog Devices Hittite Analog Devices Hittite 具有一系列射频放大器,它们具有各种功能。 一些具有低噪声放大器,一些射频放大器可与共振器、负电阻设备、变容二极管和缓冲器放大器集成,而另外一些可提供高效率 GaAs InGaP 异质结双极性晶体管 (HBT) MMIC 驱动器放大器。 ### 射频 (RF) 放大器,Analog Devices
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