Chip AI consultant
Technical parameters/Input capacitance: | 1180 pF |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/rise time: | 105 ns |
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Technical parameters/Input capacitance (Ciss): | 1180pF @25V(Vds) |
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Technical parameters/rated power (Max): | 3.75 W |
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Technical parameters/descent time: | 65 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3750 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 10.67 mm |
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Dimensions/Width: | 9.65 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQB50N06LTM
|
ON Semiconductor | 类似代替 | TO-263-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQB50N06LTM, 52 A, Vds=60 V, 3引脚 D2PAK (TO-263)封装
|
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FQB50N06LTM
|
Fairchild | 类似代替 | TO-263-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQB50N06LTM, 52 A, Vds=60 V, 3引脚 D2PAK (TO-263)封装
|
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STB55NF06T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
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