Technical parameters/power supply voltage (DC): | 4.50V (min) |
|
Technical parameters/power supply current: | 0.4 mA |
|
Technical parameters/number of pins: | 8 |
|
Technical parameters/clock frequency: | 1 MHz |
|
Technical parameters/access time: | 550 ns |
|
Technical parameters/memory capacity: | 500 B |
|
Technical parameters/access time (Max): | 550 ns |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
|
Technical parameters/power supply voltage: | 4.5V ~ 5.5V |
|
Technical parameters/power supply voltage (Max): | 5.5 V |
|
Technical parameters/power supply voltage (Min): | 4.5 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Length: | 4.9 mm |
|
Dimensions/Width: | 3.9 mm |
|
Dimensions/Height: | 1.5 mm |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | -40℃ ~ 85℃ |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Each |
|
Other/Manufacturing Applications: | Computers and computer peripherals, Computers& Computer Peripherals |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FM24C04B-GTR
|
Cypress Semiconductor | 完全替代 | SOIC-8 |
4KB的串行5V F-RAM存储器 4Kb Serial 5V F-RAM Memory
|
||
FM25L04B-G
|
Ramtron | 类似代替 | SOIC-8 |
F-RAM，Cypress Semiconductor ### FRAM（铁电 RAM） FRAM（铁电随机存取存储器）是非易失存储器，将铁电膜用作电容器来储存数据。 F-RAM 有 ROM 和 RAM 设备的特点，具备高速存取、写入模式的高耐受性、低功耗、非易失和出色的防篡改功能。 因此，这款存储器特别适用于需要高安全性和低消耗的智能卡，以及移动电话和其他设备。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review