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Model DN2530N8-G

Description MICROCHIP DN2530N8-G 晶体管, MOSFET, N沟道, 200 mA, 300 V, 12 ohm, 0 V

Brand: Microchip

Packaging SOT-89-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	0.74 W
Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	12 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1.6 W
Technical parameters/drain source voltage (Vds):	300 V
Technical parameters/Continuous drain current (Ids):	0.2A
Technical parameters/rise time:	15 ns
Technical parameters/Input capacitance (Ciss):	300pF @25V(Vds)
Technical parameters/rated power (Max):	1.6 W
Technical parameters/descent time:	20 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1.6W (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-89-3
Dimensions/Length:	4.6 mm
Dimensions/Width:	2.6 mm
Dimensions/Height:	1.6 mm
Dimensions/Packaging:	SOT-89-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
DN2530N8	Suptertex	功能相似		Trans MOSFET N-CH 300V 0.2A 4Pin(3+Tab) SOT-89
DN2530N8-G	Microchip	功能相似	SOT-89-3	Trans MOSFET N-CH 300V 0.2A 4Pin(3+Tab) SOT-89	PDF
DN2530N8-G	Suptertex	功能相似		Trans MOSFET N-CH 300V 0.2A 4Pin(3+Tab) SOT-89