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Alternative material

Technical parameters/frequency:	200 MHz
Technical parameters/rated voltage (DC):	-45.0 V
Technical parameters/rated current:	-100 mA
Technical parameters/number of pins:	3
Technical parameters/polarity:	PNP
Technical parameters/dissipated power:	300 mW
Technical parameters/gain bandwidth product:	200 MHz
Technical parameters/breakdown voltage (collector emitter):	45 V
Technical parameters/Maximum allowable collector current:	0.1A
Technical parameters/minimum current amplification factor (hFE):	420 @2mA, 5V
Technical parameters/rated power (Max):	300 mW
Technical parameters/DC current gain (hFE):	600
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	65 ℃
Technical parameters/dissipated power (Max):	350 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	3.05 mm
Dimensions/Width:	1.4 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-65℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	BC857C-7	Diodes	类似代替	SOT-23-3	双极晶体管 - 双极结型晶体管(BJT) PNP BIPOLAR	PDF

ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
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