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Description STMICROELECTRONICS VN340SP-E 芯片, 固态继电器 高边
Product QR code
Packaging SOIC-10
Delivery time
Packaging method Tube
Standard packaging quantity 1
20.38  yuan 20.38yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(2804) Minimum order quantity(1)
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Technical parameters/power supply voltage (DC):

10.0V (min)

 

Technical parameters/number of output interfaces:

4

 

Technical parameters/output current:

700 mA

 

Technical parameters/power supply current:

6 mA

 

Technical parameters/number of pins:

10

 

Technical parameters/input voltage (Min):

32 V

 

Technical parameters/output current (Max):

700 mA

 

Technical parameters/number of inputs:

4

 

Technical parameters/operating temperature (Max):

125 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/power supply voltage:

10V ~ 36V

 

Technical parameters/power supply voltage (Max):

36 V

 

Technical parameters/power supply voltage (Min):

10 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

10

 

Encapsulation parameters/Encapsulation:

SOIC-10

 

Dimensions/Length:

9.5 mm

 

Dimensions/Width:

9.6 mm

 

Dimensions/Height:

3.65 mm

 

Dimensions/Packaging:

SOIC-10

 

Physical parameters/operating temperature:

-40℃ ~ 125℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Power Management, power management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2014/06/16

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VN340SPTR-E VN340SPTR-E ST Microelectronics 完全替代 PowerSO-10
STMicroelectronics 智能电源开关 (IPS) 将控制截面的逻辑接口、驱动器、诊断和保护功能与高侧和高侧配置的功率级集成。 ### 电源和负载开关,Toshiba 集成高侧和低侧智能电源开关电路包含很多功能性和保护特征,如过电流、过电压、短路、断路负载、过温度和电源逆转。 这些高度集成设备利用低接通电阻 MOSFET 晶体管,以最小化功耗并保持高效率。
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