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Specification parameters
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Technical parameters/power supply voltage (DC):

10.5V (min)

Technical parameters/number of output interfaces:

Technical parameters/output current:

700 mA

Technical parameters/power supply current:

12 mA

Technical parameters/number of channels:

Technical parameters/dissipated power:

96000 mW

Technical parameters/Input voltage (Max):

45 V

Technical parameters/output current (Max):

700 mA

Technical parameters/output current (Min):

1 A

Technical parameters/number of inputs:

Technical parameters/operating temperature (Max):

125 ℃

Technical parameters/operating temperature (Min):

-40 ℃

Technical parameters/dissipated power (Max):

96000 mW

Technical parameters/power supply voltage:

10.5V ~ 45V

Technical parameters/power supply voltage (Max):

45 V

Technical parameters/power supply voltage (Min):

10.5 V

Technical parameters/input voltage:

5.5 V

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

PowerSO-36

Dimensions/Length:

16 mm

Dimensions/Width:

11.1 mm

Dimensions/Height:

3.3 mm

Dimensions/Packaging:

PowerSO-36

Physical parameters/operating temperature:

-40℃ ~ 125℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tube

Other/Manufacturing Applications:

Industrial, Industrial

Compliant with standards/RoHS standards:

RoHS Compliant

Com

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	VN808CM-E	ST Microelectronics	类似代替	PowerSO-36	STMICROELECTRONICS VN808CM-E 芯片, 高压侧驱动器, 八通道, 36POWERSO	PDF
	VN808CM-E	ST Microelectronics	类似代替	PowerSO-36	STMICROELECTRONICS VN808CM-E 芯片, 高压侧驱动器, 八通道, 36POWERSO	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643