Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/Maximum allowable collector current: | 3A |
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Technical parameters/minimum current amplification factor (hFE): | 40 @1A, 2V |
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Technical parameters/rated power (Max): | 1 W |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-205 |
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Dimensions/Packaging: | TO-205 |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 类似代替 | TO-5-3 |
3安培, 85V , NPN硅功率晶体管JAN , JTX , JTXV , JANS 3 Amp, 85V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS
|
||
|
|
Microsemi | 类似代替 | TO-5 |
TO-39 NPN 60V 3A
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