Technical parameters/dissipated power: | 0.8 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
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Technical parameters/rated power (Max): | 800 mW |
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Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 800 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-5-3 |
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Dimensions/Packaging: | TO-5-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 200℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2219A
|
Rectron | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
|
|
Semelab | 功能相似 | TO-205 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
|
|
New Jersey Semiconductor | 功能相似 | 3 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
Multicomp | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
ST Microelectronics | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
Continental Device | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
Motorola | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
Fairchild | 功能相似 | TO-226 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
CDIL | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
National Semiconductor | 功能相似 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
|||
2N2219A
|
Rectron Semiconductor | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
2N2219A
|
Major Brands | 功能相似 | TO-39 |
0.8W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.8A Ic, 35 hFE.
|
||
|
|
Semelab | 功能相似 | TO-5 |
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, METAL, TO-5, 3 PIN
|
||
2N2219AL
|
Microsemi | 功能相似 | TO-5-3 |
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, METAL, TO-5, 3 PIN
|
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