Technical parameters/rated voltage (DC): | 60.0 V |
|
Technical parameters/rated current: | 7.70 A |
|
Technical parameters/drain source resistance: | 200 mΩ (max) |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.5W (Ta), 25W (Tc) |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60.0V (min) |
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Technical parameters/Continuous drain current (Ids): | 7.70 A |
|
Technical parameters/rise time: | 50.0 ns |
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Technical parameters/Input capacitance (Ciss): | 300pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 2.5W (Ta), 25W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.38 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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International Rectifier | 功能相似 | TO-220-3 |
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International | 功能相似 | Through Hole |
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IFC | 功能相似 |
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IRFR014PBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 7.7A DPAK
|
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IRFR014PBF
|
Vishay Intertechnology | 完全替代 | TO-252 |
MOSFET N-CH 60V 7.7A DPAK
|
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IRFR014PBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 7.7A DPAK
|
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IRFR014PBF
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 60V 7.7A DPAK
|
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