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Model FQPF2N60C
Description ON Semiconductor QFET 系列 Si N沟道 MOSFET FQPF2N60C, 2 A, Vds=600 V, 3引脚 TO-220F封装
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Brand: ON Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
3.76  yuan 3.76yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7400) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

4.7 Ω

 

Technical parameters/dissipated power:

23 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/rise time:

25 ns

 

Technical parameters/Input capacitance (Ciss):

180pF @25V(Vds)

 

Technical parameters/rated power (Max):

23 W

 

Technical parameters/descent time:

28 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

23 W

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.16 mm

 

Dimensions/Width:

4.7 mm

 

Dimensions/Height:

9.19 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Rail, Tube

 

Other/Manufacturing Applications:

Power management, lighting, industrial

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQPF2N60 FQPF2N60 Freescale 类似代替
MOSFET N-CH 600V 1.6A TO-220F
PDF
FQPF2N60 FQPF2N60 Fairchild 类似代替 TO-220-3
MOSFET N-CH 600V 1.6A TO-220F
PDF

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