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Model FQD9N25TM
Description 晶体管, MOSFET, N沟道, 7.4 A, 250 V, 0.33 ohm, 10 V, 5 V
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.12  yuan 2.12yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6706) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.33 Ω

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/threshold voltage:

5 V

 

Technical parameters/Input capacitance:

700 pF

 

Technical parameters/drain source voltage (Vds):

250 V

 

Technical parameters/rise time:

105 ns

 

Technical parameters/Input capacitance (Ciss):

540pF @25V(Vds)

 

Technical parameters/rated power (Max):

2.5 W

 

Technical parameters/descent time:

45 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2500 mW

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.73 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Motor drive and control, power management, audio

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

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