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Model VNQ660SP

Description 四通道高侧固态继电器 QUAD CHANNEL HIGH SIDE SOLID STATE RELAY

Brand: ST Microelectronics

Packaging PowerSO-10

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/power supply voltage (DC):	36.0V (max)
Technical parameters/rated voltage (DC):	36.0 V
Technical parameters/number of output interfaces:	4
Technical parameters/output current:	6 A
Technical parameters/power supply current:	40.0 mA
Technical parameters/number of channels:	4
Technical parameters/drain source resistance:	130 mΩ
Technical parameters/dissipated power:	113600 mW
Technical parameters/drain source voltage (Vds):	41.0 V
Technical parameters/Continuous drain current (Ids):	18.0 mA
Technical parameters/output current (Max):	6 A
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	40 ℃
Technical parameters/power supply voltage:	6V ~ 36V
Technical parameters/power supply voltage (Max):	36 V
Technical parameters/power supply voltage (Min):	5.5 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	12
Encapsulation parameters/Encapsulation:	PowerSO-10
Dimensions/Packaging:	PowerSO-10
Physical parameters/operating temperature:	-40℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead
Customs information/ECCN code:	EAR99

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	VNQ660SP-E	ST Microelectronics	功能相似	PowerSO-10	STMICROELECTRONICS VNQ660SP-E 驱动器芯片, 高压侧, 6V-36V电源, 10A输出, 40µs延迟, SOIC-10	PDF