Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 6.00 A |
|
Technical parameters/number of output interfaces: | 1 |
|
Technical parameters/drain source resistance: | 60.0 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 60 W |
|
Technical parameters/Leakage source breakdown voltage: | 42 V |
|
Technical parameters/Continuous drain current (Ids): | 6.00 A |
|
Technical parameters/output current (Max): | 6 A |
|
Technical parameters/number of inputs: | 1 |
|
Technical parameters/dissipated power (Max): | 60000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -40℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VND7NV04-E
|
ST Microelectronics | 类似代替 | TO-252-3 |
STMICROELECTRONICS VND7NV04-E 晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V
|
||
VND7NV0413TR
|
ST Microelectronics | 类似代替 | TO-252-3 |
â ???? OMNIFET IIA ???? ：全AUTOPROTECTED功率MOSFET âOMNIFET IIâ: FULLY AUTOPROTECTED POWER MOSFET
|
||
VND7NV04TR-E
|
ST Microelectronics | 类似代替 | TO-252-3 |
STMICROELECTRONICS VND7NV04TR-E 晶体管, MOSFET, N沟道, 6 A, 45 V, 0.06 ohm, 5 V, 500 mV
|
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