Technical parameters/breakdown voltage (collector emitter): | 750 V |
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Technical parameters/minimum current amplification factor (hFE): | 5 @6A, 5V |
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Technical parameters/rated power (Max): | 60 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 60000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-3-3 |
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Dimensions/Packaging: | TO-3-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Rail |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJAF6810D
|
Fairchild | 类似代替 | TO-3 |
NPN型三重扩散平面硅晶体管 NPN Triple Diffused Planar Silicon Transistor
|
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