Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.011 Ω |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/threshold voltage: | 1.9 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Input capacitance (Ciss): | 610pF @10V(Vds) |
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Technical parameters/rated power (Max): | 900 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 3.99 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Consumer electronics, computers and computer peripherals, power management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 类似代替 | SOT |
FAIRCHILD SEMICONDUCTOR FDS6982AS 双路场效应管, MOSFET, 双N沟道, 6.3 A, 30 V, 0.011 ohm, 10 V, 1.9 V
|
||
FDS6982AS
|
ON Semiconductor | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6982AS 双路场效应管, MOSFET, 双N沟道, 6.3 A, 30 V, 0.011 ohm, 10 V, 1.9 V
|
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