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Specification parameters
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Technical parameters/rise/fall time:

3.2µs, 4.7µs

Technical parameters/Input voltage (DC):

1.25 V

Technical parameters/output voltage:

100 V

Technical parameters/number of circuits:

Technical parameters/number of channels:

Technical parameters/number of pins:

Technical parameters/forward voltage:

1.25 V

Technical parameters/input current:

60 mA

Technical parameters/dissipated power:

250 mW

Technical parameters/rise time:

1.6 µs

Technical parameters/isolation voltage:

2500 Vrms

Technical parameters/forward current:

60 mA

Technical parameters/output voltage (Max):

70 V

Technical parameters/input current (Min):

60 mA

Technical parameters/breakdown voltage:

6 V

Technical parameters/forward voltage (Max):

1.55 V

Technical parameters/forward current (Max):

60 mA

Technical parameters/descent time:

2.2 µs

Technical parameters/operating temperature (Max):

100 ℃

Technical parameters/operating temperature (Min):

-40 ℃

Technical parameters/dissipated power (Max):

250 mW

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOIC-8

Dimensions/Length:

5.13 mm

Dimensions/Width:

4.16 mm

Dimensions/Height:

3.43 mm

Dimensions/Packaging:

SOIC-8

Physical parameters/operating temperature:

-40℃ ~ 100℃

Other/Product Lifecycle:

Active

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643