Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 100 mA |
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Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 30 V |
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Technical parameters/Maximum allowable collector current: | 0.1A |
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Technical parameters/minimum current amplification factor (hFE): | 420 @2mA, 5V |
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Technical parameters/rated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Box |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC548C
|
Taiwan Semiconductor | 完全替代 | TO-92 |
放大器晶体管( NPN硅) Amplifier Transistors(NPN Silicon)
|
||
BC548C
|
NXP | 完全替代 | TO-92 |
放大器晶体管( NPN硅) Amplifier Transistors(NPN Silicon)
|
||
BC548C
|
Micro Commercial Components | 完全替代 | TO-92 |
放大器晶体管( NPN硅) Amplifier Transistors(NPN Silicon)
|
||
BC548C
|
Infineon | 完全替代 | TO-92 |
放大器晶体管( NPN硅) Amplifier Transistors(NPN Silicon)
|
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