Technical parameters/operating voltage: | 35.0V (max) |
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Technical parameters/number of output interfaces: | 2 |
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Technical parameters/output current: | ≤1 A |
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Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 150 mΩ |
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Technical parameters/dissipated power: | 1 W |
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Technical parameters/product series: | IPS022G |
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Technical parameters/output current (Max): | 1 A |
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Technical parameters/output current (Min): | 1 A |
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Technical parameters/descent time: | 1.3 µs |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 40 ℃ |
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Technical parameters/dissipated power (Max): | 1000 mW |
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Technical parameters/power supply voltage (Max): | 6 V |
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Technical parameters/power supply voltage (Min): | 4 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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