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Model 2SK3748
Description 4A,1500V,N沟道MOSFET
Product QR code
Brand: ON Semiconductor
Packaging TO-3-3
Delivery time
Packaging method Tray
Standard packaging quantity 1
67.43  yuan 67.43yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4923) Minimum order quantity(1)
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Technical parameters/drain source resistance:

7 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3 W

 

Technical parameters/threshold voltage:

3.5 V

 

Technical parameters/drain source voltage (Vds):

1500 V

 

Technical parameters/Continuous drain current (Ids):

4.00 A

 

Technical parameters/rise time:

75 ns

 

Technical parameters/Input capacitance (Ciss):

790pF @30V(Vds)

 

Technical parameters/descent time:

116 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

3W (Ta), 65W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-3-3

 

Dimensions/Packaging:

TO-3-3

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tray

 

Other/Minimum Packaging:

30

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP4N150 STP4N150 ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP4N150 功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 30 V, 4 V
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